2007. 9. 10 1/2 semiconductor technical data kdz5.6ce revision no : 1 zener diode silicon epitaxial planar diode constant voltage regulation application. features small package normal voltage tolerance about 2%. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ characteristic symbol rating unit power dissipation p d * 150* mw junction temperature t j 150 storage temperature range t stg -55 150 * mounted on a glass epoxy circuit board of 20 20 , pad dimension of 4 4 . characteristic symbol test condition min. typ. max. unit zener voltage v z i z =5ma 5.490 - 5.730 v dynamic impedance z z i z =5ma - - 60 knee dynamic impedance z zk i z =0.5ma - - 200 reverse current i r v r =2.5v - - 1 a total capacitance c t v r =0.5v, f=1mhz - - 25 pf v r =2.5v, f=1mhz - - 19 electrical characteristics (ta=25 ) type name marking zm
2007. 9. 10 2/2 kdz5.6ce revision no : 1 power dissipation p d (mw) zener current i z (ma) i z - v z p d - ta 0 0 50 100 150 200 2 4 6 8 10 0 50 100 150 200 ambient temperature ta ( c) * mounted on a glass epoxy circuit board of 20 x 20mm pad dimension of 4 x 4mm zener voltage v z (v) total capacitance (pf) c t - v r reverse voltage v r (v) 01 345 2 15 20 25 30 0 5 10 2 01 34567
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